Detection of surface states in GaAs and InP by thermally stimulated exoelectron emission spectroscopy

Journal of Applied Physics

Volumn 82, Issue 11, 1997, Pages 5597-5599

  Hullavarad, Shiva S ^a   Bhoraskar, S V ^a   Bose, D N ^b  

^a UNIVERSITY OF PUNE   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHROMIUM; ELECTRON EMISSION; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; FERMI SURFACE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SINGLE CRYSTALS;

CHROMIUM EFFECT; CONDUCTION BAND; SURFACE DEFECTS; THERMALLY STIMULATED EXOELECTRON EMISSION SPECTROSCOPY;

ELECTRON SPECTROSCOPY;

EID: 0031344713     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366420     Document Type: Article

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