Measurement and modelling of the radiation damage of silicon by MeV Ag ions

Materials Research Society Symposium - Proceedings

Volumn 540, Issue , 1999, Pages 31-36

  Lindner, Jörg K N ^a   Eder, Johann ^a   Stritzker, Bernd ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; AMORPHOUS MATERIALS; DIFFUSION IN SOLIDS; DOSIMETRY; ION IMPLANTATION; IONS; PLASMA COLLISION PROCESSES; REFLECTION; SILICON WAFERS; SILVER; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS VOLUMINA; HECKING MODEL; POINT DEFECT DIFFUSION;

RADIATION DAMAGE;

EID: 0032592241     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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