Compositional effects on the radiation damage of 2 MeV si ion implanted relaxed Si1-xGex alloys

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 401-405

  Lindner, J K N ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; COMPOSITION EFFECTS; CRYSTAL DEFECTS; ION IMPLANTATION; MATHEMATICAL MODELS; RADIATION DAMAGE;

DAMAGE ACCUMULATION MODEL; OPTICAL REFLECTIVITY DEPTH PROFILING (ORDP);

SILICON ALLOYS;

EID: 0031547637     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00964-0     Document Type: Article

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