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Volumn 280, Issue 5369, 1998, Pages 1583-1586

Localization of metastable atom beams with optical standing waves: Nanolithography at the Heisenberg limit

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CARBONIC ACID; HYDROCARBON; NANOPARTICLE; SILICON; SILICON DIOXIDE;

EID: 0032486183     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.280.5369.1583     Document Type: Article
Times cited : (286)

References (31)
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    • J=2 state was used.
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    • and references therein
    • J. E. Thomas and L. J. Wang, Phys. Rep. 262, 311 (1995) and references therein.
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    • Thomas, J.E.1    Wang, L.J.2
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    • note
    • osc (that is, when the vibrational levels are well resolved).
  • 18
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    • note
    • J = +1 transition. These laser polarizations reduced the complex, multilevel state structure to the simplified level structure described in this report. In our calculations, we ignore the role of atoms returning to a different magnetic substate of the J = 2 manifold, as these atoms have a small effect on the spatial distributions produced.
  • 19
    • 2642630344 scopus 로고    scopus 로고
    • note
    • Because of the diffraction of the laser beam from the edge of the substrate and experimental misalignments, the standing wave must suffer some imperfection immediately above the substrate. The extent of the clipping and the distance from the front edge of the substrate to the mirror are sufficiently small that we can neglect these contributions to the free flight experienced by the atoms.
  • 20
    • 2642696416 scopus 로고    scopus 로고
    • note
    • The widths calculated numerically for the actual atom-laser potential agreed with the analytic predictions for these low well states, justifying the use of the SHO approximation in this regime.
  • 21
    • 2642606002 scopus 로고    scopus 로고
    • note
    • 2 half width) of 320 μm, power of 7.5 mW, and detuning of 18.5 MHz. During this long exposure, the temperature of the mount holding the substrate and the mirror used to generate the standing wave was stabilized to ±30 mK to ensure that the substrate did not move relative to the nodes of the standing wave. The sample mounting system was affixed rigidly inside the vacuum system and was designed for a high degree of passive mechanical stability.
  • 22
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    • note
    • Atomic force microscope imaging was performed in contact mode on a Park Scientific AFM.
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    • note
    • 3 was used for silicon dioxide substrates.
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    • note
    • Using the measured signal-to-noise ratio in the regions between the features as an input parameter, we applied a Weiner filter to the data shown to reduce the effects of measurement noise.
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    • note
    • The substrate was exposed for 5 hours to a beam of Ar* patterned by a standing laser field with a waist of 180 μm, power of 2.25 mW, and detuning of 28 MHz. The deposited carbonaceous material was used as a mask to protect against an aqueous 1% HF etch that removed the native oxide layer. A subsequent 70°C alcoholic KOH solution was used to transfer the pattern into the underlying silicon substrate.
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    • In a demonstration of this potential for arbitrary pattern formation, the optical diffraction pattern formed by quenching light diffracting through a 10-μm-wide slit was used to pattern an Ar* beam [K. K. Berggren, thesis, Harvard University (1997)].
  • 31
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    • note
    • Supported in part by NSF grant PHY 9312572. This work made use of the Harvard-Materials Research Science and Engineering Center (NSF) shared facilities. K.S.J. was supported by an AT&T/Lucent Technologies Graduate Fellowship. J.H.T. was supported by the Fannie and John Hertz Foundation.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.