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Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 603-608

Super-lattice AlAs/AlInAs for lateral-oxide current confinement in InP-based lasers

(3) Ohnoki, N a Koyama, F a Iga, K a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

AlGaInAs system; Lateral oxidation; Long wavelength; MOCVD; Semiconductor lasers

Indexed keywords

CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

ALUMINUM ARSENIDE; ALUMINUM GALLIUM INDIUM ARSENIDE;

SEMICONDUCTOR LASERS;

EID: 0032477217 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00631-9 Document Type: Article

Times cited : (6)

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