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Volumn 36, Issue 1 A, 1997, Pages 148-149
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Proposal and demonstration of AlAs-oxide confinement structure for InP-based long wavelength lasers
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Author keywords
AlAs oxide; AlGaInAs InP system; Current confinement; Long wavelength lasers; VCSELs
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Indexed keywords
CURRENT CONFINEMENT;
LIGHT CONFINEMENT;
VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);
CRYSTAL STRUCTURE;
CURRENT VOLTAGE CHARACTERISTICS;
INTERFACES (MATERIALS);
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
OXIDATION;
REACTION KINETICS;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING INDIUM PHOSPHIDE;
SUBSTRATES;
THERMAL EFFECTS;
SEMICONDUCTOR LASERS;
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EID: 0030673704
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.36.148 Document Type: Article |
Times cited : (8)
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References (13)
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