Strain relaxation in heteroepitaxial Si1-xGex films via surface roughening processes

Materials Research Society Symposium - Proceedings

Volumn 399, Issue , 1996, Pages 407-412

  Ozkan, Cengiz S ^a   Nix, William D ^a   Gao, Huajian ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; NUCLEATION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; STRESS RELAXATION; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ANISOTROPIC ELASTIC ANALYSIS; DEPTH PROFILING; HETEROEPITAXIAL SILICON GERMANIUM FILMS; MISFIT DISLOCATION NETWORKS; SUPERCRITICAL THICKNESS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0029703063     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)