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Journal of Crystal Growth

Volumn 167, Issue 1-2, 1996, Pages 24-31

Locally varying chemical potential and growth surface profile: A case study on solution grown Si(Ge)/Si

(6) Albrecht, M a Christiansen, S a Michler, J a Strunk, H P a Hansson, P O b Bauser, E b

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISSOLUTION; GIBBS FREE ENERGY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; STRESS RELAXATION; SUPERSATURATION; SURFACE PROPERTIES; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

SINUSOIDAL SURFACE UNDULATIONS; STRAIN ENERGY DENSITY; THERMODYNAMIC EQUILIBRIUM;

SEMICONDUCTOR GROWTH;

EID: 0030565198 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(96)00227-8 Document Type: Article

Times cited : (5)

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