Ion dose uniformity for planar sample plasma immersion ion implantation

IEEE Transactions on Plasma Science

Volumn 26, Issue 6, 1998, Pages 1669-1679

  Kwok, Dixon Tat Kun ^a   Chu, Paul K ^b   Chan, Chung ^b  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b Northeastern University   (United States)

Author keywords

Chuck design; Ion dose uniformity; Plasma immersion ion implantation; Semiconductor processing

Indexed keywords

ION IMPLANTATION; MATHEMATICAL MODELS; PLASMA APPLICATIONS;

PLASMA IMMERSION ION IMPLANTATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032312632     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/27.747885     Document Type: Article

References (20)

1. P. K. Chu, S. Qin, C. Chan, N. W. Cheung, and L. A. Larson, "Plasma immersion ion implantation-A fledgling technique for semiconductor processing," Mat. Sci. Engineering: Reports, vol. R17, no. 6/7, pp. 207-280, 1996.
2. N. W. Cheung, "Plasma immersion ion implantation for semiconductor processing," Mat. Chem. Phys., vol. 46, pp. 132-139, 1996.
3. P. K. Chu, N. W. Cheung, and C. Chan, "Recent applications of plasma immersion ion implantation," Semicond. Int., vol. 6, pp. 165-172, June 1996.
4. J. V. Mantese, I. G. Brown, N. W. Cheung, and G. A. Collins, "Plasmaimmersion ion implantation," MRS Bulletin, vol. 21, no. 8, pp. 52-56, 1996.
5. T. Sheng, S. B. Felch, and C. B. Cooper, "Characteristics of a plasma doping system for semiconductor device fabrication," J. Vac. Sci. Technol. B, vol. 12, no. 2, pp. 969-972, 1994.
6. B. Mizuno, H. Nakaoka, M. Takase, A. Hori, I. Nakayama, and M. Ogura, "New methods for ultra-shallow Boron doping by using plasma, plasma-less and sputtering," in Extended s 1995 Int. Conf. Solid State Devices Mat., Osaka, Japan, 1995, pp. 1041-1042.
7. B. Mizuno, M. Takase, I. Nakayama, and M. Ogura, "Plasma doping and plasma-less doping of silicon," in Symp. VLSI Tech. Dig., Honolulu, HI, 1996, p. 66.
8. S. Qin and C. Chan, "Plasma immersion ion implantation doping experiments for microelectronics," J. Vac. Sci. Technol. B, vol. 12, no. 2, pp. 962-968, 1994.
9. J. Min, P. K. Chu, Y. C. Cheng, J. B. Liu, S. Im, S. lyer, and N. W. Cheung, "Buried oxide formation by plasma immersion ion implantation," Mat. Chem. Phys., vol. 40, no. 3, pp. 219-222, 1995.
10. J. B. Liu, S. S. K. lyer, C. M. Hu, N. W. Cheung, R. Gronsky, J. Min, and P. Chu, "Formation of buried oxide in silicon using separation by plasma implantation of oxygen (SPIMOX)," App. Phys. Lett., vol. 67, no. 16, pp. 2361-2363, 1995.
11. J. Min, P. K. Chu, Y. C. Cheng, J. Liu, S. S. lyer, and N. W. Cheung, "Nucleation mechanism of SPIMOX (separation by plasma implantation of oxygen)," Surf. Coatings Technol., vol. 85, no. 1/2, pp. 60-63, 1996.
12. P. K. Chu, X. Lu, S. S. K. lyer, and N. W. Cheung, "A new way to make SOI wafers," Solid State Technol., vol. 40, no. 5, pp. S9-S14, 1997.
13. X. Lu, S. S. K. lyer, J. B. Liu, C. M. Hu, N. W. Cheung, J. Min, and P. K. Chu, "Separation by plasma implantation of oxygen to form silicon on insulator," Appl. Phys. Lett., vol. 70, no. 13, pp. 1748-1750, 1997.
14. S. S. K. lyer, X. Lu, J. B. Liu, J. Min, Z. Fan, P. Chu, C. M. Hu, and N. W. Cheung, "Separation by plasma implantation of oxygen (SPIMOX) operational phase space," IEEE Trans. Plasma Sci., vol. 25, pp. 1128-1135, Oct. 1997.
15. X. Lu, N. W. Cheung, M. D. Strathman, P. K. Chu, and B. Doyle, "Hydrogen induced silicon surface layer cleavage," Appl. Phys. Lett., vol. 71, no. 13, pp. 1804-1806, 1997.
16. X. Lu, S. S. K. lyer, C. M. Hu, N. W. Cheung, J. Min, Z. N. Fan, and P. K. Chu, "Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation," Appl. Phys. Lett., vol. 71, no. 19, pp. 2767-2269, 1997.
17. P. K. Chu, S. Qin, C. Chan, N. W. Cheung, and P. K. Ko, "Instrumental and process considerations for the fabrication of silicon-on-insulator (SOI) structures by plasma immersion ion implantation," IEEE Trans. Plasma Sci., vol. 26, pp. 79-84, Feb. 1998.
18. J. D. Bernstein, S. Qin, C. Chan, and T. J. King, "Hydrogénation of polycrystalline silicon thin film transistors by plasma ion implantation," IEEE Electron Device Lett., vol. 16, no. 10, pp. 421-423, 1995.
19. Z. Fan, P. K. Chu, C. Chan, and N. W. Cheung, "Sample stage induced dose and energy nonuniformity during plasma immersion on implantation," Appl. Phys. Lett., vol. 73, no. 2, pp. 202-204, 1998.
20. J. R. Conrad, J. L. Radtke, R. A. Dodd, F. J. Worzala, and N. C. Tran, "Plasma source ion implantation technique for surface modification of materials," J. Appl. Phys., vol. 62, no. 11, pp. 4591-4596, 1987.