Fabrication and low threshold current density CW operation of GalnAsP/lnP multiple-reflector microcavity laser

Optical and Quantum Electronics

Volumn 28, Issue 5, 1996, Pages 487-493

  Shin, K C ^a   Tamura, M ^a   Serizawa, N ^a   Kurihashi, S ^a   Tamura, S ^a   Arai, S ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

MULTIPLE REFLECTOR MICROCAVITY LASER; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 0030141717     PISSN: 03068919     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00943616     Document Type: Article

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