Stripe direction dependence of mesa angle formed on (100) InP by selective etching using HCl solution

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 A, 1996, Pages 2383-2384

  Tamura, Munehisa ^a   Shin, Ki Chul ^a   Serizawa, Naoki ^a   Arai, Shigehisa ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Electron beam lithography; Epitaxial mask; GaInAs InP; InP mesa angle; Selective wet chemical etching

Indexed keywords

CRYSTAL STRUCTURE; ELECTRON BEAM LITHOGRAPHY; ETCHING; HYDROCHLORIC ACID; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL DEVICES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICA; SOLUTIONS;

EPITAXIAL MASK LAYER; ETCH DEPTH RATE; MESA ANGLE; SELECTIVE WET CHEMICAL ETCHING; STRIPE DIRECTION DEPENDENCE; UNDERCUTTING FREE ETCHING;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030125529     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2383     Document Type: Article

References (6)

1. K. Furuya, L. A. Coldren, B. I. Miller and J. A. Rentschler: Electron. Lett. 17 (1981) 582.
2. T. Kambayashi, C. Kitahara and K. Iga: Jpn. J. Appl. Phys. 19 (1980) 79.
3. S. Arai, M. Asada, T. Tanbun-Ek, Y. Suematsu, Y. Itaya and K. Kishino: IEEE J. Quantum Electron. 17 (1981) 640.
4. E. Inamura, Y. Miyamoto, S, Tamura, T. Takasugi and K. Furuya: Jpn. J. Appl. Phys. 28 (1989) 2193.
5. P. H. L. Notten, J. E. A. M. van den Meerakker and J. J. Kelly: Etching of III-V Semiconductors (Elsevier Advanced Technology, Oxford, 1991).
6. K. C. Shin, M. Tamura, A. Kasukawa, N. Serizawa, S. Kurihashi, S. Tamura and S. Arai: IEEE Photon. Technol. Lett. 7 (1995) 1119.