Utilization of photon emission microscopy in determining drain junction property of submicron NMOSFETs

Journal of the Korean Physical Society

Volumn 33, Issue SUPPL. 2, 1998, Pages

  Lee, Sang Gi ^a   Jeong, Ju Young ^b   Hwang, Jeong Mo ^c   Eo, Yungseon ^a   Kwon, Oh Kyong ^a  

^a Hanyang University   (South Korea)

^b Suwon University   (South Korea)

^c Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032261804     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

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2. G. L. Teh, W. K. Chim, Y. K. Swee and Y. K. Co, Semiconductor Sci. Technol. 12, 662 (1997).
3. J. Watanabe, K. Goto and T. Nakamura, Appl. Phys. Lett. 70, 387 (1997).
4. J. J. Rha and J. K. Park, J. Appl. Phys. 82, 2933 (1997).
5. Sang-Gi Lee, Hi-Deok Lee, Young-Jong Lee, Ju-Young Jeong, Oh-Kyong Kwon and Chang-Hyo Lee, Jap. J. Appl. Phys. 37, 1041 (1998).