Trade-off between hot carrier effect and current driving capability due to drain contact structures in deep submicron MOSFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 B, 1998, Pages 1041-1046

  Lee, Sang Gi ^a   Lee, Hi Deok ^c   Lee, Young Jong ^c   Jeong, Ju Young ^b   Eo, Yungseon ^a   Kwon, Oh Kyong ^a   Lee, Chang Hyo ^a  

^a Hanyang University   (South Korea)

^b Suwon University   (South Korea)

^c Hynix Semiconductor Inc   (South Korea)

Author keywords

Contact; Electron temperature; Hot carrier; MOSFET; Photon emission

Indexed keywords

EID: 0011940641     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1041     Document Type: Article

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