-
1
-
-
0022212124
-
Transmission line pulsing techniques for circuit modelling of ESD phenomena
-
EOS/ESD Assoc.
-
Maloney T J and Khurana N 1985 Transmission line pulsing techniques for circuit modelling of ESD phenomena Proc. EOS/ESD Symp. 1985 (EOS/ESD Assoc.) pp 49-54
-
(1985)
Proc. EOS/ESD Symp. 1985
, pp. 49-54
-
-
Maloney, T.J.1
Khurana, N.2
-
2
-
-
0022219373
-
ESD on CHMOS devices - Equivalent circuits, physical models and failure mechanisms
-
New York: IEEE
-
Khurana N, Maloney T and Yeh W 1985 ESD on CHMOS devices - equivalent circuits, physical models and failure mechanisms Proc. IEEE Int. Reliability Physics Symp. 1985 (New York: IEEE) pp 212-23
-
(1985)
Proc. IEEE Int. Reliability Physics Symp. 1985
, pp. 212-223
-
-
Khurana, N.1
Maloney, T.2
Yeh, W.3
-
3
-
-
0029227261
-
Modified transmission line system and transistor test structures for the study of ESD
-
New York: IEEE
-
Ashton R A 1995 Modified transmission line system and transistor test structures for the study of ESD Proc. IEEE Int. Conf. on Microelectronics Test Structures 1995 (New York: IEEE) pp 127-32
-
(1995)
Proc. IEEE Int. Conf. on Microelectronics Test Structures 1995
, pp. 127-132
-
-
Ashton, R.A.1
-
4
-
-
0021614057
-
A summary of most effective electrostatic discharge protection circuits for MOS memories and their observed failure modes
-
EOS/ESD Assoc.
-
Duvvury C, Rountree R N and White LS 1983 A summary of most effective electrostatic discharge protection circuits for MOS memories and their observed failure modes Proc. EOS/ESD Symp. 1983 (EOS/ESD Assoc.) pp 181-4
-
(1983)
Proc. EOS/ESD Symp. 1983
, pp. 181-184
-
-
Duvvury, C.1
Rountree, R.N.2
White, L.S.3
-
5
-
-
0024171636
-
Output ESD protection techniques for advanced CMOS processes
-
EOS/ESD Assoc.
-
Duvvury C and Rountree R 1988 Output ESD protection techniques for advanced CMOS processes Proc. EOS/ESD Symp. 1988 (EOS/ESD Assoc.) pp 206-11
-
(1988)
Proc. EOS/ESD Symp. 1988
, pp. 206-211
-
-
Duvvury, C.1
Rountree, R.2
-
8
-
-
0024172896
-
Photoemission testing for ESD failures: Advantages and limitations
-
EOS/ESD Assoc.
-
Wills K S, Duvvury C and Adams O 1988 Photoemission testing for ESD failures: advantages and limitations Proc. EOS/ESD Symp. 1988 (EOS/ESD Assoc.) pp 53-61
-
(1988)
Proc. EOS/ESD Symp. 1988
, pp. 53-61
-
-
Wills, K.S.1
Duvvury, C.2
Adams, O.3
-
9
-
-
0040450023
-
Photon emission as a tool for ESD failure localization and as a technique for studying ESD phenomena
-
Oxford: Pergamon
-
Hannemann M and Amerasekera A 1990 Photon emission as a tool for ESD failure localization and as a technique for studying ESD phenomena Proc. 1st European Symp. on Semiconductor Reliability 1990 (Oxford: Pergamon) pp 77-83
-
(1990)
Proc. 1st European Symp. on Semiconductor Reliability 1990
, pp. 77-83
-
-
Hannemann, M.1
Amerasekera, A.2
-
10
-
-
0028195446
-
Photon emission study of ESD protection devices under second breakdown conditions
-
New York: IEEE
-
Ishizuka H, Okuyama K and Kubota K 1995 Photon emission study of ESD protection devices under second breakdown conditions Proc. IEEE Int. Reliability Physics Symp. 1995 (New York: IEEE) pp 286-91
-
(1995)
Proc. IEEE Int. Reliability Physics Symp. 1995
, pp. 286-291
-
-
Ishizuka, H.1
Okuyama, K.2
Kubota, K.3
-
12
-
-
0029492310
-
Intelligent defect localization methodology through the use of photoemission spectral analysis
-
Singapore: IEEE
-
Seo J S, Lee S S, Choe C S, Hong K D, Daniel S and Cheong K Y 1995 Intelligent defect localization methodology through the use of photoemission spectral analysis Proc. 5th Int. Symp. on the Physical and Failure Analysis of Integrated Circuits 1995 (Singapore: IEEE) pp 49-54
-
(1995)
Proc. 5th Int. Symp. on the Physical and Failure Analysis of Integrated Circuits 1995
, pp. 49-54
-
-
Seo, J.S.1
Lee, S.S.2
Choe, C.S.3
Hong, K.D.4
Daniel, S.5
Cheong, K.Y.6
-
15
-
-
0022561939
-
Analysis of product hot electron problems by gated emission microscopy
-
New York: IEEE
-
Khurana N and Chiang C L 1986 Analysis of product hot electron problems by gated emission microscopy Proc. IEEE Int. Reliability Physics Symp. 1986 (New York: IEEE) pp 189-94
-
(1986)
Proc. IEEE Int. Reliability Physics Symp. 1986
, pp. 189-194
-
-
Khurana, N.1
Chiang, C.L.2
-
16
-
-
0024169423
-
Effects of interconnect process and snapback voltage on the ESD failure threshold of NMOS transistors
-
EOS/BSD Assoc.
-
Chen K-L 1988 Effects of interconnect process and snapback voltage on the ESD failure threshold of NMOS transistors Proc. EOS/ESD Symp. 1988 (EOS/BSD Assoc.) pp 212-9
-
(1988)
Proc. EOS/ESD Symp. 1988
, pp. 212-219
-
-
Chen, K.-L.1
-
17
-
-
0000790344
-
Improving the ESD failure threshold of suicided nMOS output transistors by ensuring uniform current flow
-
EOS/ESD Assoc.
-
Polgreen T and Chatterjee A 1989 Improving the ESD failure threshold of suicided nMOS output transistors by ensuring uniform current flow Proc. EOS/ESD Symp. 1989 (EOS/ESD Assoc.) pp 167-74
-
(1989)
Proc. EOS/ESD Symp. 1989
, pp. 167-174
-
-
Polgreen, T.1
Chatterjee, A.2
-
18
-
-
0019635233
-
Optical properties of phosphorus-doped polycrystalline silicon layers
-
Lubberts G, Burkey B C, Moser F and Trabka E A 1981 Optical properties of phosphorus-doped polycrystalline silicon layers J. Appl. Phys. 52 6870-8
-
(1981)
J. Appl. Phys.
, vol.52
, pp. 6870-6878
-
-
Lubberts, G.1
Burkey, B.C.2
Moser, F.3
Trabka, E.A.4
-
20
-
-
0021482804
-
Hot-electron-induced photon and photocarrier generation in silicon MOSFET's
-
Tam S and Hu C 1984 Hot-electron-induced photon and photocarrier generation in silicon MOSFET's IEEE Trans. on Electron Devices 31 1264-73
-
(1984)
IEEE Trans. on Electron Devices
, vol.31
, pp. 1264-1273
-
-
Tam, S.1
Hu, C.2
-
21
-
-
84954146509
-
Experimental verification of the mechanism of hot-carrier-induced photon emission in n-MOSFET's with a CCD gate structure
-
New York: IEEE
-
Wong H S 1991 Experimental verification of the mechanism of hot-carrier-induced photon emission in n-MOSFET's with a CCD gate structure IEEE Electron Devices Meeting 1991 (New York: IEEE) pp 549-52
-
(1991)
IEEE Electron Devices Meeting 1991
, pp. 549-552
-
-
Wong, H.S.1
-
22
-
-
4243161126
-
Spectroscopic observations of photon emissions in n-MOSFETs in the saturation region
-
Tao J M, Chan D S H and Chim W K 1996 Spectroscopic observations of photon emissions in n-MOSFETs in the saturation region J. Appl. Phys. 29 1380-5
-
(1996)
J. Appl. Phys.
, vol.29
, pp. 1380-1385
-
-
Tao, J.M.1
Chan, D.S.H.2
Chim, W.K.3
-
24
-
-
0026835234
-
Light emission from hot carriers in silicon MOSFETs
-
Hblitz K and Lyon S A 1992 Light emission from hot carriers in silicon MOSFETs Semicond. Sci. Technol. 7 B567-9
-
(1992)
Semicond. Sci. Technol.
, vol.7
-
-
Hblitz, K.1
Lyon, S.A.2
-
26
-
-
0008780580
-
Observation of hot-hole injection in NMOS transistors using a modified floating-gate technique
-
Saks N S, Heremans P L, Hove L V D, Maes H E, Keersmaecker R F D and Declerck G J 1986 Observation of hot-hole injection in NMOS transistors using a modified floating-gate technique IEEE Trans. Electron Devices 33 1529-34
-
(1986)
IEEE Trans. Electron Devices
, vol.33
, pp. 1529-1534
-
-
Saks, N.S.1
Heremans, P.L.2
Hove, L.V.D.3
Maes, H.E.4
Keersmaecker, R.F.D.5
Declerck, G.J.6
-
27
-
-
0025474204
-
The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors
-
Doyle B S, Bourcerie M, Bergonzoni C, Benecchi R, Bravis A, Mistry K R and Boudou A 1990 The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors IEEE Trans. Electron Devices 37 1869-76
-
(1990)
IEEE Trans. Electron Devices
, vol.37
, pp. 1869-1876
-
-
Doyle, B.S.1
Bourcerie, M.2
Bergonzoni, C.3
Benecchi, R.4
Bravis, A.5
Mistry, K.R.6
Boudou, A.7
|