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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3279, Issue , 1998, Pages 161-171

MOCVD growth and characterization of 100 mm diameter (Ga1-xAlx)0.5In0.5P/GaAs epitaxial materials for LED applications

(6) Feng, Z C a Ferguson, Ian a Armour, E a Chadha, A a Masaun, N a Stall, R A a

a EMCORE CORPORATION (United States)

Author keywords

FTIR; GaAlInP; GaAs; LED; MOCVD; Photoluminescence; Raman scattering; Sheet resistivity

Indexed keywords

BANDWIDTH; CRYSTAL MICROSTRUCTURE; EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PARAMETER ESTIMATION; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTING GALLIUM COMPOUNDS; THIN FILMS;

EPITAXIAL MATERIALS;

LIGHT EMITTING DIODES;

EID: 0032225663 PISSN: 0277786X EISSN: None Source Type: Conference Proceeding
DOI: 10.1117/12.304422 Document Type: Conference Paper

Times cited : (1)

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