Photoluminescence and Raman properties of MOCVD-grown In0.5(Ga1-xAlx)0.5P layers under different growth conditions

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 529-532

  Feng, Z C ^a   Collins, D ^a   Armour, E ^a   Zawadzki, P ^a   Stall, R A ^a   Pavlosky, M ^a  

^a EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHONONS; PHOTOLUMINESCENCE; PRESSURE EFFECTS; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SPECTRUM ANALYSIS;

LOW PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION (LPMOCVD);

HETEROJUNCTIONS;

EID: 0030646579     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)