Threshold reduction by rapid thermal annealing in MBE-grown AllnGaAs multiquantum weil lasers on GaAs

Electronics Letters

Volumn 32, Issue 4, 1996, Pages 351-352

  Ko, J ^a   Mondry, M J ^a   Young, D B ^a   Hu, S Y ^a   Coldren, L A ^a   Gossard, A C ^a  

^a University of California   (United States)

Author keywords

Rapid thermal processing; Semiconductor junction lasers

Indexed keywords

ANNEALING; CURRENT DENSITY; EMISSION SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PERFORMANCE; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

ALUMINUM GALLIUM ARSENIDE; ALUMINUM INDIUM GALLIUM ARSENIDE; DOUBLE QUANTUM WELL LASERS; LOW THRESHOLD CURRENT DENSITY; RAPID THERMAL ANNEALING;

QUANTUM WELL LASERS;

EID: 0030084450     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960216     Document Type: Article

References (8)

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