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Volumn 14, Issue 6 SPEC. ISS. 1, 1998, Pages 417-423

Optimal burn-in decision making

Author keywords

Burn in; Package level burn in; Semiconductor devices; Wafer level burn in

Indexed keywords

ELECTRONICS PACKAGING; FAILURE ANALYSIS; INTEGRATED CIRCUITS; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

EID: 0032202103     PISSN: 07488017     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (16)

References (22)
  • 2
    • 0020848561 scopus 로고
    • Facing the headaches of early failures: A state-of-the-art review of burn-in decisions
    • W. Kuo and Y. Kuo, 'Facing the headaches of early failures: a state-of-the-art review of burn-in decisions', Proc. IEEE, 71, 1257-1266 (1983).
    • (1983) Proc. IEEE , vol.71 , pp. 1257-1266
    • Kuo, W.1    Kuo, Y.2
  • 3
    • 0021443115 scopus 로고
    • Reliability enhancement through optimal burn-in
    • W. Kuo, 'Reliability enhancement through optimal burn-in', IEEE Trans. Reliab., REL-33, 145-156 (1984).
    • (1984) IEEE Trans. Reliab. , vol.REL-33 , pp. 145-156
    • Kuo, W.1
  • 4
    • 11744272174 scopus 로고
    • A realistic view of VLSI burn-in
    • E. R. Hnatek, 'A realistic view of VLSI burn-in', Eval. Engng., 28, 80 (1989).
    • (1989) Eval. Engng. , vol.28 , pp. 80
    • Hnatek, E.R.1
  • 5
    • 0026819585 scopus 로고
    • An overview - VLSI burn-in considerations
    • H. E. Hamilton, 'An overview - VLSI burn-in considerations', Eval. Engng., 31, 16 (1992).
    • (1992) Eval. Engng. , vol.31 , pp. 16
    • Hamilton, H.E.1
  • 6
    • 0030212736 scopus 로고    scopus 로고
    • A nonparametric approach to estimate system burn-in time
    • W. T. K. Chien and W. Kuo, 'A nonparametric approach to estimate system burn-in time', IEEE Trans. Semicond. Manuf., 9, 461-466 (1996).
    • (1996) IEEE Trans. Semicond. Manuf. , vol.9 , pp. 461-466
    • Chien, W.T.K.1    Kuo, W.2
  • 7
    • 0029277597 scopus 로고
    • Modeling and maximizing burn-in effectiveness
    • W. T. K. Chien and W. Kuo, 'Modeling and maximizing burn-in effectiveness', IEEE Trans. Reliab. REL-44, 19-25 (1995).
    • (1995) IEEE Trans. Reliab. , vol.REL-44 , pp. 19-25
    • Chien, W.T.K.1    Kuo, W.2
  • 8
    • 0031257418 scopus 로고    scopus 로고
    • A nonparametric Bayes approach to decide system burn-in time
    • W. T. K. Chien and W. Kuo, 'A nonparametric Bayes approach to decide system burn-in time', Naval Res. Logist., 44, 655-671 (1997).
    • (1997) Naval Res. Logist. , vol.44 , pp. 655-671
    • Chien, W.T.K.1    Kuo, W.2
  • 10
    • 85008033668 scopus 로고
    • The promise of known-good-die technologies
    • B. Vasquez and S. Lindsey, 'The promise of known-good-die technologies', MCM '94 Proc., 1994, pp. 1-6.
    • (1994) MCM '94 Proc. , pp. 1-6
    • Vasquez, B.1    Lindsey, S.2
  • 11
    • 0029737185 scopus 로고    scopus 로고
    • Assessing MOS gate oxide reliability on wafer level with ramped/constant voltage and current stress
    • A. Martin et al., 'Assessing MOS gate oxide reliability on wafer level with ramped/constant voltage and current stress', 1995 IRW Final Report, 1996, pp. 81-91.
    • (1996) 1995 IRW Final Report , pp. 81-91
    • Martin, A.1
  • 12
  • 13
    • 0343481260 scopus 로고
    • A cost-effective wafer-level burn-in technology
    • April
    • D. B. Tuckerman et al., 'A cost-effective wafer-level burn-in technology', Int. Conf. Exhib. on Multichip Modules, April 1994, pp. 34-40.
    • (1994) Int. Conf. Exhib. on Multichip Modules , pp. 34-40
    • Tuckerman, D.B.1
  • 14
    • 0005059130 scopus 로고    scopus 로고
    • A pragmatic look at wafer-level burn-in: The wafer-level known-good die consortium
    • W. G. Flynn and L. Gilg, 'A pragmatic look at wafer-level burn-in: the wafer-level known-good die consortium', IECEM '96 Proc., 1996, pp. 287-292.
    • (1996) IECEM '96 Proc. , pp. 287-292
    • Flynn, W.G.1    Gilg, L.2
  • 15
    • 11744257067 scopus 로고
    • Semiconductor Industry Association
    • 1978-1993 Industry Data Book, Semiconductor Industry Association, 1994.
    • (1994) 1978-1993 Industry Data Book
  • 16
    • 13044280285 scopus 로고
    • Integrated Circuit Engineering Corp., Scottsdale, AZ
    • Cost Effective IC Manufacturing 1995, Integrated Circuit Engineering Corp., Scottsdale, AZ, 1995.
    • (1995) Cost Effective IC Manufacturing 1995
  • 17
    • 0029705787 scopus 로고    scopus 로고
    • On the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown
    • R. Degraeve et al., 'On the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown', Proc. Int. Reliability Physics Symp., 1996, pp. 44-54.
    • (1996) Proc. Int. Reliability Physics Symp. , pp. 44-54
    • Degraeve, R.1
  • 18
    • 0030273983 scopus 로고    scopus 로고
    • A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions
    • R. Degraeve et al., 'A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions', Microelectron. Reliab., 36, 1651-1654 (1996).
    • (1996) Microelectron. Reliab. , vol.36 , pp. 1651-1654
    • Degraeve, R.1
  • 19
    • 0030273974 scopus 로고    scopus 로고
    • Comprehensive gateoxide reliability evaluation for DRAM processes
    • R.-P. Vollertsen and W. W. Abadeer, 'Comprehensive gateoxide reliability evaluation for DRAM processes', Microelectron. Reliab.,36, 1631-1638 (1996).
    • (1996) Microelectron. Reliab. , vol.36 , pp. 1631-1638
    • Vollertsen, R.-P.1    Abadeer, W.W.2
  • 21
    • 0026187055 scopus 로고
    • Bimodal lifetime distributions of dielectrics for integrated circuits
    • K. van Sichart and R. P. Vollertsen, 'Bimodal lifetime distributions of dielectrics for integrated circuits', Qual. Reliab. Engng. Int., 7, 299-305 (1991).
    • (1991) Qual. Reliab. Engng. Int. , vol.7 , pp. 299-305
    • Van Sichart, K.1    Vollertsen, R.P.2
  • 22
    • 0027880070 scopus 로고
    • Wafer burn-in (WBI) technology for RAMs
    • T. Furuyama et al., 'Wafer burn-in (WBI) technology for RAMs', IEEE Int. Electron Device Meet., 1993, pp. 639-642.
    • (1993) IEEE Int. Electron Device Meet. , pp. 639-642
    • Furuyama, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.