A new statistical model for fitting bemodal oxide breakdown distributions at different field conditions

Microelectronics Reliability

Volumn 36, Issue 11-12 SPEC. ISS., 1996, Pages 1651-1654

  Degraeve, R ^a   Roussel, Ph ^a   Ogier, J L ^a   Groeseneken, G ^a   Maes, H E ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CAPACITORS; CRYSTAL DEFECTS; CURVE FITTING; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; RELIABILITY; SEMICONDUCTOR DEVICE MODELS; STATISTICAL METHODS; WEIBULL DISTRIBUTION; MATHEMATICAL MODELS;

FIELD ACCELERATION LAW; MAXIMUM LIKELIHOOD FITTING ALGORITHM; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB); STATISTICAL MODELS;

MOS DEVICES;

EID: 0030273983     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00166-7     Document Type: Article

References (3)

1. N. R. Mann, R.E. Shafer, N.D. Singpurwalla, Methods for Statistical Analysis of Reliability and Life Data. New York,Wiley (1974)
2. K. v. Sichart, R.-P. Vollertsen., Quality and Reliability Engineering International, vol. 7, pp 299-305 (1991).
3. R. Degraeve,J.L. Ogier, R. Bellens, Ph. Roussel, G. Groeseneken, H.E. Maes, Proc. IRPS, pp 44-54, (1996)