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Volumn 45, Issue 10, 1998, Pages 2138-2145

A comparative analysis of the dynamic behavior of BTG/SOI MOSFET's and circuits with distributed body resistance

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER AIDED NETWORK ANALYSIS; COMPUTER SIMULATION; ELECTRIC RESISTANCE; SILICON ON INSULATOR TECHNOLOGY;

EID: 0032188543     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.725247     Document Type: Article
Times cited : (15)

References (16)
  • 3
    • 33747407873 scopus 로고    scopus 로고
    • Dynamic floating-body instabilities in partially depleted SOI CMOS circuits in 1EDM
    • D. Suh and J. G. Possum Dynamic floating-body instabilities in partially depleted SOI CMOS circuits in 1EDM Tech. Dig. Dec. 1994 p. 661.
    • Tech. Dig. Dec. 1994 P. 661.
    • Suh, D.1    Possum, J.G.2
  • 4
    • 0029379215 scopus 로고    scopus 로고
    • Physical subthreshold MOSFET modeling applied to viable design of deep-submicron fully depleted SOI low-voltage CMOS technology
    • P. C. Yeh and J. G. Fossum Physical subthreshold MOSFET modeling applied to viable design of deep-submicron fully depleted SOI low-voltage CMOS technology IEEE Trans. Electron Devices vol. 42 p. 1605 Sept. 1995.
    • IEEE Trans. Electron Devices Vol. 42 P. 1605 Sept. 1995.
    • Yeh, P.C.1    Fossum, J.G.2
  • 8
    • 0031332650 scopus 로고    scopus 로고
    • A comparative study of SOI inverter circuits for low-voltage and low-power applications in
    • W. Jin and P. Chan A comparative study of SOI inverter circuits for low-voltage and low-power applications in Proc. IEEE Int. SOI Conf. Oct. 1997 p. 112.
    • Proc. IEEE Int. SOI Conf. Oct. 1997 P. 112.
    • Jin, W.1    Chan, P.2
  • 9
    • 0029287689 scopus 로고    scopus 로고
    • A physical charge-based model for nonfully depleted SOI MOSFET's and its use in assessing floating-body effects in SOI CMOS circuits
    • D. Suh and J. G. Fossum A physical charge-based model for nonfully depleted SOI MOSFET's and its use in assessing floating-body effects in SOI CMOS circuits IEEE Trans. Electron Devices vol. 42 p. 728 Apr. 1995.
    • IEEE Trans. Electron Devices Vol. 42 P. 728 Apr. 1995.
    • Suh, D.1    Fossum, J.G.2
  • 12
    • 0009755199 scopus 로고    scopus 로고
    • Analysis and modeling of nonlocal and dynamic floating-body effects for application in scaled SOI CMOS technology
    • S. Krishnan Analysis and modeling of nonlocal and dynamic floating-body effects for application in scaled SOI CMOS technology Ph.D. dissertation Univ. Florida Gainesville 1996.
    • Ph.D. Dissertation Univ. Florida Gainesville 1996.
    • Krishnan, S.1
  • 14
    • 0030403403 scopus 로고    scopus 로고
    • Bounding the sensitivity of hysteretic transient effects in partially-depleted SOI CMOS in
    • A. Wei and D. A. Antoniadis Bounding the sensitivity of hysteretic transient effects in partially-depleted SOI CMOS in Proc. IEEE Int. SOI Conf. Oct. 1996 p. 74.
    • Proc. IEEE Int. SOI Conf. Oct. 1996 P. 74.
    • Wei, A.1    Antoniadis, D.A.2
  • 16
    • 0031377797 scopus 로고    scopus 로고
    • High speed soi buffer circuit with the efficient connection of subsidiary MOSFET's for dynamic threshold control in
    • J.-H. Lee and Y.-J. Park High speed soi buffer circuit with the efficient connection of subsidiary MOSFET's for dynamic threshold control in Proc. IEEE Int. SOI Conf. Oct. 1997 p. 152.
    • Proc. IEEE Int. SOI Conf. Oct. 1997 P. 152.
    • Lee J-H1    Park, Y.-J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.