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Diamond and Related Materials

Volumn 6, Issue 2-4, 1997, Pages 282-285

Formation of an oriented β-SiC layer during the initial growth phase of diamond on silicon (100)

(5) Maillard Schaller, E a Kuttel O M a Groning P a Aebi, P a Schlapbach, L a

a UNIVERSITY OF FRIBOURG (Switzerland)

Author keywords

Nucleation; Orientation; Silicon carbide; X ray photoelectron diffraction

Indexed keywords

EID: 0009821286 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/s0925-9635(96)00734-0 Document Type: Article

Times cited : (13)

References (19)

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