Electron beam induced current imaging of near-contact regions in semi-insulating GaAs

IEEE Transactions on Electron Devices

Volumn 45, Issue 9, 1998, Pages 2024-2031

  Brennan, C R ^a   Chriss, M F ^b   Taylor, C ^a   Haegel, N M ^b   Michael White, A ^a  

^a FAIRFIELD UNIVERSITY   (United States)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRON BEAMS; IMAGING TECHNIQUES; INDUCED CURRENTS; INSULATING MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

ELECTRON BEAM INDUCED CURRENT IMAGING; FORWARD BIAS; REVERSE BIAS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032164236     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.711370     Document Type: Article

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