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Volumn 39, Issue 5, 1992, Pages 1226-1236

Development of bulk GaAs room temperature radiation detectors

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; FABRICATION; GAMMA RAYS; PARTICLE DETECTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0026928908     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.173182     Document Type: Article
Times cited : (42)

References (25)
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  • 3
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    • Evaluation of Epitaxial n-GaAs for Nuclear Radiation Detection
    • J.E. Eberhardt, R.D. Ryan, and A.J. Tavendale, “Evaluation of Epitaxial n-GaAs for Nuclear Radiation Detection”, Nucl. Instr. and Meth., 94, (1971), pp. 463–476.
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    • Eberhardt, J.E.1    Ryan, R.D.2    Tavendale, A.J.3
  • 8
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    • Recombination Processes in Semiconductors
    • Suppl. 17
    • R.N. Hall, “Recombination Processes in Semiconductors”, Proc. IEE, 106B, Suppl. 17, (1959), pp. 923–931.
    • (1959) Proc. IEE , vol.106B , pp. 923-931
    • Hall, R.N.1
  • 9
    • 36149025707 scopus 로고
    • Surface States and Rectification at a Metal Semi-Conductor Contact
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    • Bardeen, J.1
  • 10
    • 0016519711 scopus 로고
    • A Review of the Theory and Technology for Ohmic Contacts to Group III-V Compound Semiconductors
    • V.L. Rideout, “A Review of the Theory and Technology for Ohmic Contacts to Group III-V Compound Semiconductors”, Solid State Elec., Vol. 18, (1975), pp. 541–550.
    • (1975) Solid State Elec. , vol.18 , pp. 541-550
    • Rideout, V.L.1
  • 12
    • 0003957801 scopus 로고
    • Semiconductors and Semimetals
    • Academic Press, Inc., Orlando
    • R.K. Willardson and A.C. Beer, Semiconductors and Semimetals, Vol. 20, Academic Press, Inc., Orlando, (1984).
    • (1984) , vol.20
    • Willardson, R.K.1    Beer, A.C.2
  • 14
    • 0014871990 scopus 로고
    • High Resolution Nuclear Radiation Detectors from Epitaxial n-GaAs
    • J.E. Eberhardt, R.D. Ryan, and A.J. Tavendale, “High Resolution Nuclear Radiation Detectors from Epitaxial n-GaAs”, App. Phys. Lett., Vol. 17, No. 10, (1970), pp. 427–429.
    • (1970) App. Phys. Lett. , vol.17 , Issue.10 , pp. 427-429
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    • Behaviour of Gamma-Ray Detectors from High Purity Germanium at Low Temperature
    • Feb.
    • R. Stuck, J.P. Ponpon, and P. Siffert, “Behaviour of Gamma-Ray Detectors from High Purity Germanium at Low Temperature”, IEEE Trans. Nucl. Sci., NS-19, Feb., (1972), pp. 270–278.
    • (1972) IEEE Trans. Nucl. Sci. , vol.NS-19 , pp. 270-278
    • Stuck, R.1    Ponpon, J.P.2    Siffert, P.3
  • 22
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    • Preparation of Stable Counters by Means of Compensating Germanium with Radiation Produced Structural Defects
    • June
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.