Transient Radiation Effects in GaAs Devices: Bulk Conduction and Channel Modulation Phenomena in D-MESFET, E-JFET, and n+-SI-n+ Structures

IEEE Transactions on Nuclear Science

Volumn 31, Issue 6, 1984, Pages 1502-1507

  Flesner, L D ^a  

^a Naval Command   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; INTEGRATED CIRCUITS - RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE;

BULK CONDUCTION; CHANNEL MODULATION; RESPONSE MECHANISMS;

SEMICONDUCTOR DEVICES;

EID: 0021596159     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1984.4333538     Document Type: Article

References (11)

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2. E. R. Walton, Jr., W. T. Anderson, Jr., R. Zucca and J. K. Notthoff, “The Effects of Transient Radiation on GaAs Schottky Diode FET Logic Circuits,” IEEE Trans. on Nucl. Sci., NS-30, no. 6, 4178(1983).
3. W. T. Anderson, Jr., and S. C. Binari, “Transient Radiation Effects at X-Band in GaAs FETs and ICs,” IEEE Trans. on Nucl. Sci., NS-30, no. 6, 4205(1983).
4. L. D. Flesner, “Position and Bias Dependence of Transient Radiation Effects in GaAs Devices,” IEEE GaAs IC Symp. Techn. Digest, 1983, p. 125.
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7. D. B. Holt, “Quantitative Conduction-Mode Mode Scanning Electron Microscopy,” Quantitative Scanning Electron Microscopy, eds. D. B.HoIt, et. al., pp. 213-286, (Academic Press, N.Y., 1974).
8. S. M. Sze, Physics of Semiconductor Devices, pg. 104, (John Wiley and Sons, Inc., N.Y., 1969).
9. C. Kocot and C. A. Stolte, “Backgating in GaAs MESFETs,” IEEE Trans. on Electron Dev., ED-29, no. 7, 1059(1982). ED-29.
10. D. E. Holmes, R. T. Chen, K. R. Elliott and C. G. Kirkpatrick, “Stoichiometry-Controlled Compensation in Liquid Encapsulated Czochralski GaAs,” Appl. Phys. Lett., 40, No. 1, 46(1982).
11. A. K. Nedoluha, Naval Ocean Systems Center, private communication.