Fabrication of highly oriented Si:SiO2 nanoparticles using low energy oxygen ion implantation during Si molecular beam epitaxy

Applied Physics Letters

Volumn 68, Issue 16, 1996, Pages 2249-2251

  Ishikawa, Yukari ^a   Shibata, N ^a   Fukatsu, S ^b  

^a JAPAN FINE CERAMICS CENTER   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001388672     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115874     Document Type: Article

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