Annealing-induced blue shift in luminescence band from Si-implanted SiO2 layer

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 5144-5147

  Lan, A D ^a   Liu, B X ^a   Bai, X D ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; IMPLANTED SAMPLES; INTENSITY VARIATIONS; LIQUID NITROGEN TEMPERATURE; LUMINESCENCE BAND; PEAK ENERGY; POST ANNEALING; SI IONS; SI WAFER; THERMAL-ANNEALING; VISIBLE BAND; VISIBLE PHOTOLUMINESCENCE;

LIQUID NITROGEN; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

SILICON WAFERS;

EID: 0000914001     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366317     Document Type: Article

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