Determination of minority-carrier generation lifetime in beam-recrystallized silicon-on-insulator structure by using a depletion-mode transistor

Applied Physics Letters

Volumn 47, Issue 9, 1985, Pages 950-952

  Vu, D P ^a   Pfister, J C ^a  

^a ORANGE LABS   (France)

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EID: 0005592068     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.95939     Document Type: Article

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