Investigation of Carrier Generation in Fully Depleted Enhancement and Accumulation Mode SOI MOSFET’s

IEEE Transactions on Electron Devices

Volumn 41, Issue 12, 1994, Pages 2413-2416

  Sinha, Shankar P ^a   Zaleski, Andrzej ^a   Ioannou, Dimitris E ^a  

^a GEORGE MASON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC NETWORK ANALYSIS; ELECTRON TRANSPORT PROPERTIES; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; TRANSIENTS;

ACCUMULATION MODE; CARRIER GENERATION; DUAL GATE ZERBST TECHNIQUE; FULLY DEPLETED ENHANCEMENT; SOFTWARE PACKAGE PISCES;

MOSFET DEVICES;

EID: 0028752522     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.337457     Document Type: Article

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