-
1
-
-
0029735248
-
High Q inductors for wireless applications in a complementary silicon bipolar process
-
Jan.
-
K. B. Ashby, I. A. Koullias, W. C. Finley, J. J. Bastek, and S. Moinian, "High Q inductors for wireless applications in a complementary silicon bipolar process," IEEE J. Solid-State Circuits, vol. 31, pp. 4-9, Jan. 1996.
-
(1996)
IEEE J. Solid-State Circuits
, vol.31
, pp. 4-9
-
-
Ashby, K.B.1
Koullias, I.A.2
Finley, W.C.3
Bastek, J.J.4
Moinian, S.5
-
2
-
-
0025474604
-
Si IC-compatible inductors and LC passive filters
-
N. M. Nguyen and R. G. Meyer, "Si IC-compatible inductors and LC passive filters," IEEE J. Solid-State Circuits, vol. 25, pp. 1028-1031, 1990.
-
(1990)
IEEE J. Solid-State Circuits
, vol.25
, pp. 1028-1031
-
-
Nguyen, N.M.1
Meyer, R.G.2
-
3
-
-
0029518393
-
High-Q inductors in standard silicon integrated technology and its application to an integrated RF power amplifier
-
Washington, DC
-
J. N. Burghartz, M. Soyuer, K. Jenkins, and M. Hulvey, "High-Q inductors in standard silicon integrated technology and its application to an integrated RF power amplifier," in IEDM Tech. Dig., Washington, DC, 1995, pp. 1015-1017.
-
(1995)
IEDM Tech. Dig.
, pp. 1015-1017
-
-
Burghartz, J.N.1
Soyuer, M.2
Jenkins, K.3
Hulvey, M.4
-
4
-
-
0030244074
-
Integrated RF and microwave components in BiCMOS technology
-
Sept.
-
J. N. Burghartz, M. Soyuer, and K. Jenkins, "Integrated RF and microwave components in BiCMOS technology," IEEE Trans. Electron Devices, vol. 43, pp 1559-1570, Sept. 1996.
-
(1996)
IEEE Trans. Electron Devices
, vol.43
, pp. 1559-1570
-
-
Burghartz, J.N.1
Soyuer, M.2
Jenkins, K.3
-
5
-
-
0029774940
-
Microwave inductors and capacitors in standard multilevel interconnect silicon technology
-
Jan.
-
_, "Microwave inductors and capacitors in standard multilevel interconnect silicon technology," IEEE Trans. Microwave Theory Tech., vol. 44, pp 100-104, Jan. 1996.
-
(1996)
IEEE Trans. Microwave Theory Tech.
, vol.44
, pp. 100-104
-
-
-
6
-
-
0029391707
-
A low cost and low power silicon npn bipolar process with NMOS transistors (ADRF) for RF and microwave applications
-
Oct.
-
K. K. O. P Garone, C. Tsai, G. Dawe, B. Scharf, T. Tewksbury, C. Kermarrec, and J. Yasaitis, "A low cost and low power silicon npn bipolar process with NMOS transistors (ADRF) for RF and microwave applications," IEEE Trans. Electron Devices, vol. 42, pp. 1831-1840, Oct. 1995.
-
(1995)
IEEE Trans. Electron Devices
, vol.42
, pp. 1831-1840
-
-
Garone, K.K.O.P.1
Tsai, C.2
Dawe, G.3
Scharf, B.4
Tewksbury, T.5
Kermarrec, C.6
Yasaitis, J.7
-
7
-
-
0031236728
-
Characteristics of an integrated spiral inductor with an underlying n-well
-
Sept.
-
K. Kim and K. K. O. "Characteristics of an integrated spiral inductor with an underlying n-well," IEEE Trans. Electron Devices, vol. 44, pp. 1565-1567, Sept. 1997.
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, pp. 1565-1567
-
-
Kim, K.1
O., K.K.2
-
8
-
-
0031233720
-
Integrated RF components in a SiGe bipolar technology
-
Sept.
-
J. N. Burghartz, M. Soyuer, K. Jenkins, M. Kies, M. Dolan, K. Stein, J. Malinowski, end D. Harame, "Integrated RF components in a SiGe bipolar technology," IEEE J. Solid-State Circuits, vol. 32, pp. 1440-1445, Sept. 1997.
-
(1997)
IEEE J. Solid-State Circuits
, vol.32
, pp. 1440-1445
-
-
Burghartz, J.N.1
Soyuer, M.2
Jenkins, K.3
Kies, M.4
Dolan, M.5
Stein, K.6
Malinowski, J.7
Harame, E.D.8
-
9
-
-
0029536454
-
SiGe HBT technology: Device and application issues
-
Washington, DC
-
D. Harame, L. Larson, M. Case, S. Kovacic, S. Voinigescu, T. Tewksbury, D. Nguyen-Ngoc, K. Stein, J. Cressler, S.-J. Jeng, J. Malinowski, R. Groves, E. Eld, D. Sunderland, D. Rensch, M. Gilbert, K. Schonenberg, D. Ahlgren, S. Rosenbaum, J. Glenn, and B. Meyerson, "SiGe HBT technology: Device and application issues," in IEDM Tech. Dig., Washington, DC, 1995, pp. 731-734.
-
(1995)
IEDM Tech. Dig.
, pp. 731-734
-
-
Harame, D.1
Larson, L.2
Case, M.3
Kovacic, S.4
Voinigescu, S.5
Tewksbury, T.6
Nguyen-Ngoc, D.7
Stein, K.8
Cressler, J.9
Jeng, S.-J.10
Malinowski, J.11
Groves, R.12
Eld, E.13
Sunderland, D.14
Rensch, D.15
Gilbert, M.16
Schonenberg, K.17
Ahlgren, D.18
Rosenbaum, S.19
Glenn, J.20
Meyerson, B.21
more..
-
10
-
-
0030399723
-
Temperaturea dependece of Q in spiral inductors fabricated in a silicon germanium/BiCMOS technotogy
-
Minneapolis, MN
-
R. Groves, D. L. Harame, and D. Jadus, "Temperaturea dependece of Q in spiral inductors fabricated in a silicon germanium/BiCMOS technotogy," in Proc. 1996 BCTM, Minneapolis, MN, pp. 153-156.
-
Proc. 1996 BCTM
, pp. 153-156
-
-
Groves, R.1
Harame, D.L.2
Jadus, D.3
-
11
-
-
0029520381
-
Optimization of high Q integrated inductors for multi-level metal CMOS
-
Washington DC
-
R. B. Merrill, T. W. Lee, H. You, R. Rasmussen, and L. A. Moberly, "Optimization of high Q integrated inductors for multi-level metal CMOS," in IEDM Tech. Dig., Washington DC, 1995, pp. 983-986.
-
(1995)
IEDM Tech. Dig.
, pp. 983-986
-
-
Merrill, R.B.1
Lee, T.W.2
You, H.3
Rasmussen, R.4
Moberly, L.A.5
-
17
-
-
11744335831
-
-
Matlab, Mathworks Inc, Natick, MA 01760
-
Matlab, Mathworks Inc, Natick, MA 01760.
-
-
-
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