Characteristics of an integrated spiral inductor with an underlying n-well

IEEE Transactions on Electron Devices

Volumn 44, Issue 9, 1997, Pages 1565-1567

  Kim, Kihong ^a   Kenneth, O ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; EQUIVALENT CIRCUITS; NATURAL FREQUENCIES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

SPIRAL INDUCTORS;

ELECTRIC INDUCTORS;

EID: 0031236728     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.622620     Document Type: Article

References (6)

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3. J. N. Burghartz, M. Soyuer, K. A. Jenkins, and M. D. Hulvey, "High-Q inductors in standard Silicon technology and its application to an integrated RF power amplifier," in IEDM'95, 1995, pp. 1015-1017.
4. H. M. Greenhouse, "Design of planar rectangular microelectronic inductors," IEEE Trans. Parts, Hybrids, Packag., vol. PHP-10, pp. 101-109, June 1974.
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6. J. N. Burgartz, M. Soyer, K. A. Jenkins, and M. Kies, "RF components implemented in an analog SiGe bipolar technology," in IEEE BCTM Proc., 1996, pp. 138-141.