Low consumption power application of pulse-doped gaas mesfets

IEICE Transactions on Electronics

Volumn E80-C, Issue 4, 1997, Pages 597-602

  Nobuo Shigat, Kenji Otobet ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

EPITAXIAL LAYER STRUCTURE;

MESFET DEVICES;

EID: 0031117486     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

1. S. Nakajima, K. Otobe, N. Shiga, N. Kuwata, K. Matsuzaki, T. Sekiguchi, and H. Hayashi, "Low-noise characteristics of pulse-doped GaAs MESFET's with planar self-aligned gates," IEEE Trans. Electron Devices, vol. 39, no. 4, pp. 771-776, 1992.
2. R. A. Pucel, "Profile design for distortion reduction in microwave field-effect transistors," Electron Lett., p. 204, 1978.
3. N. Iwata, K. Inosako, and M. Kuzuhara, "3 V operation L-band power double-doped heterojunction FETs," IEEE MTT-S Int. Microwave Symp. Dig., pp. 1465-1468, 1993.
4. K. Hikosaka, Y. Hirachi, and M. Abe, "Microwave power double-heterojunction HEMT's," IEEE Trans. Electron Devices, vol. 33, no. 5, pp. 583-589, 1992.
5. E. Yanokura, et al., "GaAs MESFETs fabricated by new selfalignment technology," Extended Abstracts of 19th Conf. on Solid State Devices and Materials, pp. 263-266, 1987.
6. K. Otobe, N. Kuwata, N. Shiga, S. Nakajima, K. Matsuzaki, T. Sekiguchi, and H. Hayashi, "Low-distortion MESFETs with advanced pulse-doped structure for power application," Proc. of 19th Symp. GaAs and Related Compounds., 1992, pp. 761766.
7. N. Kuwata, K. Otobe, N. Shiga, S. Nakajima, T. Sekiguchi, T. Hashinaga, R. Sakamoto, K. Matsuzaki, and H. Nishizawa, "High breakdown voltage MESFET with planar gate structure for low distortion power applications," GaAs 1C Symposium Dig., pp. 181-184,1993.
8. S. L. G. Chu, J. Huang, W. Strahle, G. Jackson, N. Pan, M. J. Schindler, and Y. Tajlma, "A highly linear MESFET," IEEE MTT-S Int. Microwave Symp. Dig., 1991, pp. 725-728.