High gain and high efficiency K-band power HEMT with WSi/Au T-shaped gate

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1997, Pages 1187-1190

  Kunii, T ^a   Yoshida, N ^a   Miyakuni, S ^a   Shiga, T ^a   Oku, T ^a   Kitano, T ^a   Udomoto, J ^a   Komaru, M ^a   Inoue, A ^a   Tsuji, S ^a   Tanino, N ^a   Ishikawa, T ^a   Mitsui, Y ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC POWER MEASUREMENT; ETCHING; GAIN MEASUREMENT; GATES (TRANSISTOR); GOLD; INTEGRATED CIRCUIT MANUFACTURE; MICROPROCESSOR CHIPS; TUNGSTEN COMPOUNDS;

OFF STATE BREAKDOWN VOLTAGE; SOLID STATE POWER AMPLIFIERS (SSPA);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030700149     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)