K-band high gain and high reliability GaAs power FET with sub-half micron WSi/Au T-shaped gate

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1994, Pages 137-140

  Kohno, Y ^a   Kunii, T ^a   Oku, T ^a   Hattori, R ^a   Udomoto, J ^a   Komaru, M ^a   Yajima, K ^a   Inoue, A ^a   Itoh, K ^a   Takano, H ^a   Ishihara, O ^a   Mitsui, S ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; HIGH ELECTRON MOBILITY TRANSISTORS; ION IMPLANTATION; MESFET DEVICES; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

GATE TO DRAIN BREAKDOWN VOLTAGE; MEAN TIME TO FAILURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0028727727     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)