Electrical characteristics of B+and BF2+implanted poly-Si and poly-GexSi1-xas gate material for sub-0.25μm applications

European Solid-State Device Research Conference

Volumn , Issue , 1995, Pages 131-134

  Salm, C ^a   Van Veen, D T ^a   Holleman, J ^a   Woerlee, P H ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISTIC; GATE MATERIALS;

EID: 84920721072     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)