메뉴 건너뛰기




Volumn 70, Issue 11, 1993, Pages 1654-1657

Defect chemical potential and the density of states in amorphous silicon

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; SEMICONDUCTING SILICON; SOLID STATE PHYSICS; STATISTICAL MECHANICS; THERMODYNAMICS;

EID: 0027559150     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.70.1654     Document Type: Article
Times cited : (27)

References (31)
  • 8
    • 84927472148 scopus 로고    scopus 로고
    • See, for example, C. Kittel, Thermal Physics (Wiley, New York, 1969), p. 143.
  • 10
    • 84927473800 scopus 로고    scopus 로고
    • See, for example, Thermal Physics (Ref. [6]), p. 118.
  • 12
    • 84927471748 scopus 로고    scopus 로고
    • It is only appropriate to swap defects to hydrogen sites at the same energy. The distribution of possible defect energies makes it incorrect to swap the integrated defect density over the integrated density of hydrogen sites as done by Winer in Ref. [4].
  • 13
    • 84927467185 scopus 로고    scopus 로고
    • We have assumed that both defects have the same average energy. If we were to have statistically independent defect energies, as was done by Schumm and Bauer in Ref. [5] then we would be minimizing the energy of a pair of defects, which would only apply if they were intimately paired.
  • 16
    • 84927488389 scopus 로고    scopus 로고
    • It is possible to solve this integral exactly, with the result that the factor of 2Ev02/ [ 2 Ev0- kT ] in Eqs. (11) and (12) would be replaced by π k T / lcurl 2 sin ( π k T / [ 2 Ev0] ) rcurl. The correction is of order 12%, which is far less than the experimental uncertainties in other factors (such as Nv0).
  • 17
    • 2842538052 scopus 로고
    • We use a temperature dependent valence band tail slope of the form Ev02= Ev0(T=0) 2+ [kT]2 as suggested by
    • (1992) Philos. Mag. Lett. , vol.66 , pp. 147
    • Stutzmann, M.1
  • 18
    • 0000606949 scopus 로고
    • The temperature independence of the electron spin signal shows that U > 0.1 eV [see, and references therein]. Many other experiments to determine U need to be reinterpreted in light of the defect pool model.
    • (1992) Phys. Rev. Lett. , vol.68 , pp. 2972
    • Lee, J.-K.1    Schiff, E.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.