A resonant-cavity, separate-absorption-and-multiplication, avalanche photodiode with low excess noise factor

IEEE Electron Device Letters

Volumn 17, Issue 3, 1996, Pages 91-93

  Anselm, K A ^a   Munaza, S S ^a   Hu, C ^a   Nie, H ^a   Streetman, B G ^a   Campbell, J C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; CAVITY RESONATORS; CURRENT VOLTAGE CHARACTERISTICS; MOLECULAR BEAM EPITAXY; PERFORMANCE; PHOTODETECTORS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SIGNAL NOISE MEASUREMENT; SPURIOUS SIGNAL NOISE;

AVALANCHE GAIN; AVALANCHE PHOTODIODE; ELECTRON INJECTION; LOW DARK CURRENT; LOW EXCESS NOISE FACTOR;

PHOTODIODES;

EID: 0030107432     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.485177     Document Type: Article

References (14)

1. A. Chin and T. Y. Chang, "Enhancement of quantum-efficiency in thin p photodiodes through absorptive resonance," J. Lightwave Technol., vol. 9. no. 3, pp. 312-328, 1991.
2. K. kishino, M. Onlu, J. Chyi, J. Reed, L. Arsenault, and H. Morkoç. "Resonant cavity-enhanced (RCE) photodetectors," IEEE J. Quantum Electron, vol. 27, no. 8, pp. 2025-2034, 1991.
3. A. G. Dentai, R. Kuchibbotla, J. C. Campbell, C. Tsai, and C. Lei, "High quantum efficiency, long-wavelengh InP/InGaAs microcavity photodiode," Electron. Lett., vol. 27, no. 23, pp. 2125-2127, 1991.
4. C. C. Barron, C. J. Mahon, B. J. Thibeault, G. Wang, W. Jiang, L. A. Coldren, and J. E. Bowers, "Resonant-cavity enhaned p-i-n photodetector with 17 GHz bandwith-efficiency product," Electron. Lett., vol. 30, pp. 1796-1797, 1994.
5. B. L. Kasper and J. C. Campbell, "Multigigabit-per-second avalanche photodiode lightwave receivers," J. Lightwave Technol., vol. LT-5, no. 10, PP. 1351-1364, 1987.
6. D. T. Ekholm, J. M. Geary, J. N. Hollenhorst, V. D. Mattera, and R. Pawelek, "High bandwidth planar InP/InGaAs avalanche photodiode," IEEE Trans. Electron Devices, vol. ED-35, no. 12, p. 2433, 1988.
7. J. C. Campbell, B. C. Johnson, G. J. Qua, and W. T. Tsang, "Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes," J. Lightwave Technol., vol. 7, no. 5, pp. 778-784, 1989.
8. R. McIntyre, "Multiplication noise in uniform avalanche dioded," IEEE Trans. Electron Devices, vol. ED-13, no. 1, pp. 194-198, 1966.
9. K. A. Anselm, S. S. Murtaza, I.-H. Tan, R. V. Chelakara, M. R. Islam, R. D. Dupuis, B. G. Streetman, J. E. Bowers, E. L. Hu, and J. C. Campbell, "High-performance resonant-cavity photodetectors," presented at IEEE Device Res. Conf., Charlottsville, VA, 1995; and S. S. Murtaza, K. A. Anselm, C. Hu, H. Nie, B. G. Streetman, and J. C. Campbell, "Resonant-cavity enhanced separated absorption and multiplication avalanche photodetector," IEEE Photon. Technol. Lett., vol. 8, 1996.
10. K. A. Anselm, S. S. Murtaza, I.-H. Tan, R. V. Chelakara, M. R. Islam, R. D. Dupuis, B. G. Streetman, J. E. Bowers, E. L. Hu, and J. C. Campbell, "High-performance resonant-cavity photodetectors," presented at IEEE Device Res. Conf., Charlottsville, VA, 1995; and S. S. Murtaza, K. A. Anselm, C. Hu, H. Nie, B. G. Streetman, and J. C. Campbell, "Resonant-cavity enhanced separated absorption and multiplication avalanche photodetector," IEEE Photon. Technol. Lett., vol. 8, 1996.
11. C. Kuo, M. Boonzaayer, and G. Maracas, "Real-time in-situ thickness control of Fabry Perot cavities in MBE by ellipsometry," presented at the Electron. Mat. Conf., Charlottesville, VA. 1995.
12. T. Kagawa, Y. Kawamura, H. Asai, and N. Naganuma, "InGaAs/InAlAs superlattice avalanche photodiode with a separated photoabsorption layer," Appl. Phys. Lett., vol. 57, no. 18, pp. 1895-1897, 1990.
13. J. Marsland, R. Woods, and C. Brownhill, "Lucky drift estimation of excess noise factor for conventional avalanche photodiodes including the dead space effect," IEEE Trans. Electron Devices, vol. 39, no. 5, pp. 1129-1135, 1992.
14. V. Chandramouli, C. Maziar, and J. Campbell, "Monte-Carlo Simulation of the effect of multiplication layer thickness in wide-bandwidth avalanche photodiodes," IEEE Trans. Electron Devices, vol. 40, no. 11, p. 2137, 1993.