In-situ spectroscopic ellipsometry and reflectance difference spectroscopy of GaAs(001) surface reconstructions

Applied Surface Science

Volumn 107, Issue , 1996, Pages 48-52

  Wassermeier, M ^a   Behrend, J ^a   Zettler, J T ^b   Stahrenberg, K ^b   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ELLIPSOMETRY; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SPECTROSCOPIC ANALYSIS; SURFACE PHENOMENA; SURFACE STRUCTURE; THERMAL EFFECTS;

OPTICAL ANISOTROPY; REFLECTANCE DIFFERENCE SPECTROSCOPY; SPECTROSCOPIC ELLIPSOMETRY; SURFACE RECONSTRUCTIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030566190     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00497-7     Document Type: Article

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