Reflectance anisotropy oscillations of the heteroepitaxial growth of AlAs and Al1-xGaxAs on GaAs(001) surfaces by molecular beam epitaxy

Surface Science

Volumn 375, Issue 2-3, 1997, Pages 367-373

  Taylor, A G ^a   Turner, A R ^b   Joyce, B A ^a   Pemble, M E ^c  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b Plessey Semiconductors   (United Kingdom)

^c UNIVERSITY OF SALFORD   (United Kingdom)

Author keywords

Epitaxy; Gallium arsenide; Molecular beam epitaxy; Reflection anisotropy; Reflection spectroscopy; Semiconductor; Single crystal surfaces; Surface

Indexed keywords

ANISOTROPY; COMPOSITION EFFECTS; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; OSCILLATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SPECTROSCOPIC ANALYSIS; SURFACES; THERMAL EFFECTS;

ALUMINUM ARSENIDE; ALUMINUM GALLIUM ARSENIDE; REFLECTANCE ANISOTROPY (RA); REFLECTION SPECTROSCOPY;

HETEROJUNCTIONS;

EID: 0031123714     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01294-0     Document Type: Article

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