Recent progress in the multi-wafer CBE system

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 1-15

  Ando, Hideyasu ^a   Yamaura, Shinji ^a   Fujii, Toshio ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPOSITION; CRYSTAL DEFECTS; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; THICKNESS MEASUREMENT;

ABRUPTNESS; CURRENT GAIN; DOPING PROFILES; GAS HANDLING SYSTEM; SHUT OFF SHUTTERS; STANDARD DEVIATION; SUBSTRATE HOLDER; TILTED APERTURE; WAFERS;

CHEMICAL BEAM EPITAXY;

EID: 0030190410     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01016-5     Document Type: Article

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