Toward a very low-power integrated charge preamplifier by using III-V field effect transistors

IEEE Transactions on Nuclear Science

Volumn 45, Issue 3 PART 4, 1998, Pages 1656-1665

  De Geronimo, G ^a   Longoni, A ^b  

^a POLITECNICO DI MILANO   (Italy)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

Charge preamplifier; Gaas; Low power

Indexed keywords

ELECTRIC LOSSES; ELECTRIC VARIABLES MEASUREMENT; FIELD EFFECT TRANSISTORS; HIGH ENERGY PHYSICS; PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; WHITE NOISE;

BIAS POINT; DRAIN CURRENTS; LOW POWER DISSIPATION; LOW POWER INTEGRATED CHARGE PREAMPLIFIER;

POWER AMPLIFIERS;

EID: 0032097499     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.685288     Document Type: Article

References (33)

1. V. Radeka, S. Rescia, P. F. Manfredi, V. Speziali, and F. Svelto, JFET monolithic preamplifier with outstanding noise behavior and radiation hardness characteristics, IEEE Trans. Nuel. Sei., vol. 40, pp. 744-749, Aug. 1993.
2. V. Radeka, S. Rescia. L. A. Rehn, P. F. Manfredi, and V. Speziaii, Monolithic junction FET charge preamplifier for calorimetry at high luminosity hadron colliders, IEEE Trans. Nucl. Sei., vnl. 40, pp. 1321-1324, Oct. 1993.
3. G. Cesura and V. Re, Effects of -)-rays and neutrons on the noise behavior of monolithic JFET circuits, IEEE Trans. Nucl. Sei., vol. 41, pp. 577-582, June 1994.
4. F. Lanni, P. F. Manfredi, V. Radeka, V. Re. S. Rescia, and V. Speziali, Monolithic junction FET charge preamplifier for calorimetry at high luminosity hadron colliders, Nucl. Instrum. Methods Phys. Res., vol. A360, pp. 158-161, 1995.
5. M. A. Baturitsky and O. V. Dvornikov. Multichannel monolithic frontend system design, Part I-Peculiarities of the monolithic transistor application in head stages-Construction and operation mode optimization, Nucl. Instrum. Methods Phys. Res., vol. A378, pp. 564-569, 1996.
6. C. Petrillo, F. Sacchetti, O. Toker, and N. J. Rhodes, Solid stale neulron detectors, Nucl. Instrum. Methods Phys. Res., vol. A378, pp. 541-551, 1996.
7. M. Raymond, M. Millmore, G. Hall, R. Sachdeva, M. French, E. Nygard, and K. Yoshiota, Radiation hard electronics for LHC, Nucl. Instrum. Methods Phys. Res., vol. A360, pp. 162-165, 1995.
8. F. Krummenacher, C. C. Enz, M. Declercq, E. Vittoz, M. Campbell, E. H. M. Heijne, P. Jarron, and G. Viertel, An experimental 10MHz low power CMOS analog front end for pixel detectors, Nucl. Instrum. Methods Phys. Res., vol. A288, pp. 176-179, 1000.
9. P. Aspell, R. Boulter, A. Czermak, P. Jalocha, P. Jarron, A. Kjensmo, W. Lange, E. Nygard, A. Rudge, O. Toker, M. Turala, H. Von Der Lippe, U. Walz, P. Weilhammer, and K. Yoshioka, CMOS low noise monolithic frontends for Si strip detector readout, Nucl. lustrum. Method1, Pkys. Res., vol. A315, pp. 425-429, 1992.
10. W. Dabrowski. G. Bonazzola, P. De Remigis, and P. Giubellino, Fast bipolar front-end for binary readout of silicon strip detectors, Nucl. Instrum. Methods Phys. Res., vol. A315, pp. 425-4129, 1992.
11. E. Spencer, D. üort'an, A. Urillo, S. Kashigin, W. Rowe, A. Webster,and M. Wilder, A fast shaping low power amplifier-comparator integrated circuit for silicon strip detectors, IEEE Trans. Nucl. Sei., vol. 42, pp. 796-802, Aug. 1995.
12. [121 M. Krammer. Semiconductor tracking detectors in e+e~ vertex detectors, Nucl. lustrum. Methods Phys. Res., vol. A379, pp. 384-389, 1996.
13. M. A. Listvan, P. J. Void, and D. K. Arch, Ionizing radiation hardness of GaAs technologies, IEEE Trans. Nucl. Sei., vol. 34, pp. 1664-1669, Dec. 1987.
14. D. Di Bitonto, W. Karpinski, K. Luhelsmeyer, D. Pandoulas, G. Pierschel, C. Rente, K. Subhani, and F. Tenbusch, Radiation and cryogenic test results with a monolithic GaAs preamapliiier in C-HFET technology, Nucl. Instrum. Methods, vol. A350, pp. 530-537, 1994.
15. D. Hiemsra, Dose rale and lolal dose dependence of Lhe Iff noise performance of a GaAs operational amplifier during irradiation, IEEE Trans. Nucl. Sei., vol. 42, pp. 1615-1621, Dec. 1995.
16. G. Bertnccio, G. De Geronimo. E. Gatti, A. Longoni. J. Ludwig, K. Runge, M. Webel, and S. Lauxtermami. About the use of HEMT in front-end electronics for radiation detection, in Proc. 20th Int. Symp. GaAs and Re I. Comp., Freiburg, Germany, Sept. 1993; Inst. Phys. Conf. Ser. no. 136. IOP, 1994, pp. 111-116.
17. G. Bertuccio, G. De Geronimo, E. Gatti, A. Longoni. and A. Pullia, New perspectives in high-speed low noise charge preamplifiers with ultra-wide band heterojunction FET's, in Proc. 4th Int. Conf. Adv. Tech. and Pan. Phys., Como, Italy, 1995.
18. W. Karpinski. K. Liibelsmeyer, D. Pandoulas, G. Pierschel, C. Rente, and F. Tenbusch, Characteristics of GaAs complementary heterojunction FET's and C-HFET based amplifiers exposed to high neutron fluences, Nucl. Instrum. Methods, vol. A361, pp. 558-567, 1995.
19. G. Bertuccio, G. De Geronimo, A. Longoni, K. Runge, and S. Lauxterman, A fully integrated low-noise HEMT charge preamplifier, Nucl. Instrum. Methods Phys. Res., vol. A365, pp. 592 595, 1995.
20. E. Gatti and P. F. Manfredi, Processing the signals from solid-state detectors in elementary-particle physics; La Rivisla del Nuovo Cimenlo, vol. 9, no. 1, pp. 1-146, 1986.
21. E. Gatti, P. F. Manfredi, M. Sampietro, and V. Speziali, Suboptimal filtering of I// noise in detector charge measurements, Nucl. Instrum. Methods Phys. Res., vol. A297, pp. 467-4178. 1990.
22. Z. Y. Chang and W. Sansen, Effect of I// noise on the resolution of CMOS analog readout systems for microstrip and pixel detectors, Nucl. Instrum. Methods Phys. Res., vol. A305, pp. 553-560, 1991.
23. K. Kandiah, Random telegraph signal currents and low-frequency noise in junction field effect transistors. IEEE Trans. Electron Devices, vol. 41, no. 11, pp. 2006-2015, Nov. 1994.
24. J. C. Santiard and F. Faccio, Noise and speed characteristics of test transistors and charge amplifiers designed using a submicron CMOS technology, Nucl. Instrum. Methods Phys. Res., vol. A380, pp. 350-352, 1996.
25. [251 G. De Geronimo, Dispositivi e circuit! integral] a larga banda per lacquisizione ed il trattamento dei segnali da rivelatori di radiazione, Ph.D. dissertation, Dipartimento di Elettronica e Inforinazione, Politecnico di Milano, Jan. 1996.
26. -, In view of low noise and low power GaAs front-ends, in Proc. 5rd Int. Symp. GaAs Workshop. Cividale del Friuli, Italy. 1997.
27. P. C. Chao, W. H. Hu, and J. Kulman, Experimental comparison in the electrical performance of long and nllrashort gate length GaAs MESFET's, IEEE Electron. Device Lett., vol. 3, no. 8, pp. 187-190. Aug. 1982.
28. P. Seller, The matching condition for the optimum thermal noise performance of FET charge amplifiers, Rutherford Appleton Lab.. RAL-87-063. Sept. 1987.
29. E. A. Vittoz, Tradeoffs in low-power CMOS analog circtiils for pixel detectors, Nucl. Instrum. Methods Phys. Res., vol. A275, pp. 472-474, 1989.
30. C. T. M. Chang, T. Vrotsos, M. T. Frizzel, and R. Carroll, A sublhreshold current model for GaAs MESFET's, IEEE Electron. Device Lett., vol. 8, no. 2, pp. 69-72, Feb. 1987.
31. W. Karpinski, K. Lübelsmeyer, G. Pierschel, C. Rente, and F. Tenbusch, DC and noise performance of C-HFET transistors at low drain current densities, Nucl. Instrum. Methods, vol. A369, pp. 255-262, 1996.
32. G. De Geronimo and A. Castoldi, A low-power GaAs MESFET charge preamplifier, in Proc. 6th Top. Seminar on Experlm. Apparatus for Part. Phys. and Astrophys., S. Miniato, Italy, 1997.
33. A. Longoni, E. Gatti, and R. Sacco, 'Trapping noise in semiconductor devices: A method for determining the noise spectrum as a function of the trap position, / Appl. Phys., vol. 78, no. 10, pp. 6283-6297, Nov. 1995.