Characteristics of GaAs complementary heterojunction FETs (C-HFETs) and C-HFET based amplifiers exposed to high neutron fluences

Nuclear Inst. and Methods in Physics Research, A

Volumn 361, Issue 3, 1995, Pages 558-567

  Karpinski, W ^a   Lubelsmeyer K ^a   Pandoulas, D ^a   Pierschel, G ^a   Rente, C ^a   Tenbusch, F ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010960776     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(95)00180-8     Document Type: Article

References (11)

1. Radiation Effects in Gaas Junction Field-Effect Transistors
2. Characteristics of GaAs Heterojunction FETs (HFETs) and Source Follower FET Logic (SFFL) Inverters Exposed to High Energy Neutrons