Radiation and cryogenic test results with a monolithic GaAs preamplifier in C-HFET technology

Nuclear Inst. and Methods in Physics Research, A

Volumn 350, Issue 3, 1994, Pages 530-537

  DiBitonto, D ^a   Karpinski, W ^b   Lubelsmeyer K ^a   Pandoulas, D ^b   Pierschel, G ^b   Rente, C ^b   Subhani, K ^a,b   Tenbusch, F ^b  

^a UNIVERSITY OF ALABAMA   (United States)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CAPACITANCE; CHARGE CARRIERS; CRYOGENICS; ELECTRIC CURRENTS; GATES (TRANSISTOR); LOW TEMPERATURE OPERATIONS; MONOLITHIC INTEGRATED CIRCUITS; NEUTRONS; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

EQUIVALENT NOISE CHARGE; MONOLITHIC GALLIUM ARSENIDE PREAMPLIFIER;

FIELD EFFECT TRANSISTORS;

EID: 0028545495     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(94)91254-8     Document Type: Article

References (11)

1. Design Study of the Large Hadron Collider (LHC)
2. Proc. Large Hadron Collider Workshop
3. ECFA Study Week on Instrumentation Technology for High-Luminosity Hadron Colliders
4. Automated System for Equivalent Noise Charge Measurement from 10 ns to 10 μs
5. Noise and DC Characteristics of GaAs FETs for Use in Front-End Electronics at Future Colliders
6. Noise Characteristics of Radiation-Hard FETs for Front-End Electronics