A quasi-two-dimensional HEMT model for DC and microwave simulation

IEEE Transactions on Electron Devices

Volumn 45, Issue 6, 1998, Pages 1165-1169

  Singh, Ranjit ^a,b   Snowden, Christopher M ^b  

^a NATIONAL PHYSICAL LABORATORY   (India)

^b UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

HEMT; Microwave; Modeling; Simulation

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; HOT CARRIERS; MESFET DEVICES; MICROWAVES; QUANTUM ELECTRONICS; SEMICONDUCTOR DEVICE MODELS;

SUBSTRATE INJECTION PHENOMENA;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032095758     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.678498     Document Type: Article

References (18)

1. C. M. Snowden and R. R. Pantoja, "Quasi-two-dimensional MESFET Simulation for CAD," IEEE Trans. Electron Devices, vol. 36, pp. 1564-1574, Sept. 1989.
2. R. Drury and C. M. Snowden, "A quasi-two-dimensional HEMT model for microwave CAD applications," IEEE Trans. Electron Devices, vol. 42, pp. 1026-1032, June 1995.
3. T. Shawki, G. Salmer, and O. El-Sayed, "MODFET 2-D hydrodynamic energy modeling: Optimization of subquarter-micron-gate structures," IEEE Trans. Electron Devices, vol. 37, pp. 21-29, Jan. 1990.
4. R. Drury, "The physical modeling of heterojunction field effect transistors," Ph.D. dissertation, Univ. Eeeds, Eeeds, U.K., 1993.
5. B. Vinter, "Subbands and charge control in a two-dimensional electron gas field-effect transistor," Appl. Phys. Lett., vol. 44, no. 3, pp. 307-309, Feb. 1984.
6. F. Stern and S. D. Sarma, "Electron energy levels in GaAsGai-zAlzAs heterojunctions," Phys. Rev., vol. B30, pp. 840-848, July 1984.
7. J. Yoshida, "Classical versus quantum mechanical calculation of the electron distribution at the n-AlGaAs/GaAs heterointerface," IEEE Trans. Electron Devices, Vol. ED33, pp. 154-156, Jan. 1986.
8. D. J. Chadi and K. J. Chang, " Theory of atomic and electronic structure of DX centers in GaAs and AlxGal-xAs alloys," Phys. Rev. Lett., vol. 61, pp. 873-876, 1988.
9. T. M. Barton and C. M. Snowden, "Two-dimensional numerical simulation of trapping phenomena in the substrate of GaAs MESFET's," IEEE Trans. Electron Devices, vol. 37, pp. 1409-1415, June 1990.
10. R. Singh and C. M. Snowden, "A self-consistent charge-control model for HEMT's incorporating deep level effects," in Proc. Int. Workshop Comput. Electron., Eeeds, U.K., 1993, pp. 60-64.
11. _, "Investigation of trapping effect on the operation of HEMT," in Proc. GaAs Simulation Group VII Meet., Harrogate, U.K., Apr. 1993.
12. D. H. Park and K. F. Bernnan, "Theory of electronic transport in twodimensional Gao.gsIno.isAs Alo.isGao.ssAs pseudomorphic structures," J. Appl. Phys., vol. 65, p. 1615, 1989.
13. S. Adachi, "Material parameters of Ini-GaAsyPi-y and related binaries," J. Appl. Phys., vol. 53, pp. 8775-8792, Dec. 1982.
14. C. P. Kuo, S. K. Vong, R. M. Cohen, and G. B. Stringfellow, "Effect of mismatch strain on band gap in III-V semiconductors," J. Appl. Phys., vol. 57, pp. 5428-5432, June 1985.
15. J. Y. Marzin, M. N. Charasse, and B. Sermage, "Optical investigation of a new type of valency-band configuration in Inx Gai - x As-GaAs strained super-lattices," Phys. Rev. B, vol. 31, pp. 8298-8301, June 1985.
16. E. H. Rhoderick, "Metal semiconductor contacts," Proc. IEEE, vol. 129, pt. 1, pp. 1-14, Feb. 1982.
17. R. Singh and C. M. Snowden, "Small-signal characterization of microwave and millimeter-wave HEMT's based on a physical model," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 114-121, Jan. 1996.
18. _, "Earge-signal modeling of millimeter-wave HEMT's," in Proc. 24th Europ. Microwave Conf., Cannes, France, Sept. 1994, pp. 1325-1330.