Two-Dimensional Numerical Simulation of Trapping Phenomena in the Substrate of GaAs MESFET’s

IEEE Transactions on Electron Devices

Volumn 37, Issue 6, 1990, Pages 1409-1415

  Barton, Trevor M ^a   Snowden, Christopher M ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

CHANNEL-SUBSTRATE INTERFACE; MESFET; TRAP FILLING; TRAPPING;

TRANSISTORS, FIELD EFFECT;

EID: 0025446620     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.106234     Document Type: Article

References (15)

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