Substrate noise coupling through planar spiral inductor

IEEE Journal of Solid-State Circuits

Volumn 33, Issue 6, 1998, Pages 877-884

  Pun, Alan L L ^a,b,c,g   Yeung, Tony ^a,b   Lau, Jack ^a,b,h,i,j,k   Clément, François J R ^a,d,e,k,l   Su, David K ^a,f,h,k,m,n  

^a IEEE   (United States)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c Pencom Semiconductor   (United States)

^d EPFL   (Switzerland)

^e Snake Technologies   (France)

^f HEWLETT PACKARD LABORATORIES   (United States)

^g Pericom Semiconductor   (United States)

^h HKUST ^*  (United States)

ⁱ SCHLUMBERGER   (United States)

^j Intgd Info Technology Santa Clara   (United States)

^k STANFORD UNIVERSITY   (United States)

^l SWISS FEDERAL INSTITUTE OF TECHNOLOGY   (Switzerland)

^m UNIVERSITY OF TENNESSEE   (United States)

ⁿ HEWLETT PACKARD COMPANY   (United States)

more..

Author keywords

Coupling; Cross talk; Guard ring; Hollow inductor; Isolation; RF power amplifier; Spiral inductor; Substrate noise

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIGITAL CIRCUITS; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUIT TESTING; POWER AMPLIFIERS; SENSORS; SPURIOUS SIGNAL NOISE; VLSI CIRCUITS;

DRAIN BULK CAPACITANCE; OXIDE CAPACITANCE; PLANAR SPIRAL INDUCTORS; SUBSTRATE NOISE COUPLING;

ELECTRIC INDUCTORS;

EID: 0032094757     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.678650     Document Type: Article

References (12)

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