Impact of energy band-gap grading on responsivity of an AlxGa1 - XN ultraviolet p-n detector

Solid-State Electronics

Volumn 42, Issue 6, 1998, Pages 963-967

  Malachowski, M J ^a  

^a JAN DLUGOSZ UNIVERSITY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; ELECTRIC CURRENTS; ENERGY GAP; LIGHT ABSORPTION; PHOTODIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

CONTINUITY EQUATION; GALLIUM NITRIDE;

ULTRAVIOLET DETECTORS;

EID: 0032091557     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00107-5     Document Type: Article

References (26)

1. Caputo, D., De Cesare, G., Irrere, F. and Palma, F., IEEE Trans. Electron. Dev., 1996, 43, 1351.
2. Davis, R. F., IEEE Proc., 1991, 80, 702.
3. Strite, S. and Morkoc, H., J. Vac. Sci. Technol. B, 1992, 10, 1327.
4. Strite, S., Lin, M. E. and Morkoc, H., Thin Solid Films, 1993, 231, 197.
5. Morkoc, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B. and Burns, M., J. Appl. Phys., 1994, 76, 1363.
6. Akasaki, I. and Amano, H., J. Electrochem. Soc., 1994, 141, 2266.
7. Razeghi, M. and Rogalski, A., J. Appl. Phys., 1996, 79, 7433.
8. Mohammad, S. N., Salvador, A. A. and Morkoc, H., Proc. IEEE, 1995, 88, 1306.
9. Khan, M. A., Chen, Q., Sun, C. J., Shur, M. S., Macmillan, M. F., Devaty, R. P. and Choyke, J., Proc. SPIE, 1995, 2397, 283.
10. Zhang, X., Kung, P., Walker, D., Piotrowski, J., Rogalski, A., Salvador, A. and Razeghi, M., Appl. Phys. Lett., 1995, 67, 2028.
11. Chernyak, L., Osinsky, A., Temkin, H., Yang, J. W., Chen, Q. and Khan, M. A., Appl. Phys. Lett., 1996, 69, 2531.
12. Chen, Q., Khan, M. A., Sun, C. J. and Yang, J. W., Electronics Letters, 1995, 31, 1781.
13. Van Hove, J. M., Hickman, R., Klaassen, J. J., Chow, P. P. and Ruden, P. P., Appl. Phys. Lett., 1997, 70, 2282.
14. Van de Wiele, F., in Solid State Imaging, eds. J. G. Jespers, F. Van de Wiele and M. H. White. Noordhoff, Leyden, 1976, pp. 41-76.
15. Malachowski, M. J. and Rogalski, A., Journal of Technical Physics, 1997, 38, 65.
16. Malachowski, M. J. and Rogalski, A., Proc. SPIE, 1997, 3179, 242.
17. Zhang, X., Kung, P., Saxier, A., Walker, D., Wang, T. C. and Razeghi, M., Appl. Phys. Lett., 1995, 67, 1745.
18. Polyakov, A. Y., Shin, M., Freitas, J. A., Skowronski, M., Greve, D. W. and Wilson, R. G., J. Appl. Phys., 1996, 80, 6348.
19. Aktas, O., Fan, Z. F., Mohammad, S. N., Botchkarev, A. E. and Morkoc, H., Appl. Phys. Lett., 1996, 69, 3872.
20. Lim, B. W., Chen, Q. C., Yang, J. Y. and Khan, M. A., Appl. Phys. Lett., 1996, 68, 3761.
21. Pawlikiewicz, A. H. and Guha, S., IEEE Trans., 1990, 37, 403.
22. Dhingra, A. and Rothwarf, A., IEEE Trans., 1996, 43, 613.
23. Joshi, R. P., J. Appl. Phys., 1994, 76, 4434.
24. Rosenfeld, D., Garber, V. and Bahir, G., J. Appl. Phys., 1995, 77, 925.
25. Rosenfeld, D., Garber, V., Ariel, V. and Bahir, G., J. Electronic Materials, 1995, 24, 1321.
26. Pankove, J. I., Optical Processes in Semiconductors. Prentice-Hall, Englewood Cliffs, N.J, 1971, p. 35.