Influence of doping and geometry on GaN ultraviolet photodiode performance. Numerical modeling

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3179, Issue , 1997, Pages 242-246

  Malachowski M J ^a,b   Rogalski, A ^a  

^a MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

^b JAN DLUGOSZ UNIVERSITY   (Poland)

Author keywords

GaN photodiodes; Minority carrier diffusion lengths; Quantum efficiency; Ultraviolet detectors

Indexed keywords

CIVIL AVIATION; CRYSTALS; DIFFUSION; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; MAXIMUM LIKELIHOOD ESTIMATION; PHOTODIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM DOTS; ULTRAVIOLET DETECTORS; ULTRAVIOLET RADIATION;

ESTIMATION PROCEDURES; GAN MATERIALS; GAN PHOTODIODES; MINORITY CARRIER DIFFUSION LENGTHS; NUMERICAL MODELING; P-N JUNCTIONS; RESPONSIVITY; SPECTRAL RESPONSIVITY; ULTRAVIOLET PHOTODIODES; UV RADIATIONS;

QUANTUM EFFICIENCY;

EID: 0004548390     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.276231     Document Type: Conference Paper

References (10)

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