Miniature tunnel junction by electron-beam-induced deposition

Nanotechnology

Volumn 9, Issue 2, 1998, Pages 104-107

  Komuro, M ^a   Hiroshima, H ^a   Takechi, A ^a,b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; DEPOSITS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; ELECTRON BEAMS; HYDROCARBONS; MIM DEVICES; WIRE;

ELECTRON BEAM INDUCED DEPOSITION; MINIATURE TUNNEL JUNCTION; POST ANNEALING; SINGLE ELECTRON TRANSPORT MATERIALS;

MINIATURE INSTRUMENTS;

EID: 0032090054     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/9/2/011     Document Type: Article

References (15)

1. Nakajima Y, Takahashi Y, Horiguchi S, Iwadate K, Namatsu H, Kurihara K and Tabe M 1994 Appl. Phys. Lett. 65 2833
2. Altmeyer S, Spangenberg B, Kuhnel F and Kurz H 1996 Microelectron. Eng. 30 399
3. Woodham R G and Ahmed H 1994 J. Vac. Sci. Technol. B 12 3280
4. Fulton T A and Dolan G J 1987 Phys. Rev. Lett. 59 109
5. Ji L, Dresselhaus P D, Han S, Lin K, Zheng W and Lukens J E 1994 J. Vac. Sci. Technol. B 12 3619
6. Komuro M, Hiroshima H, Haraichi S, Ishii K, Wada T and Okayama S 1996 Microelectron. Eng. 30 411
7. Ichihashi T and Matsui S 1988 J. Vac. Sci. Technol. B 6 1869
8. Matsui S, Ichihashi T and Mito M 1989 J. Vac. Sci. Technol. B 7 1182
9. Koops W P, Kretz J, Rudolph M, Weber M, Dahm G and Lee K L 1994 Japan. J. Appl. Phys. 33 7099
10. Koops H W P, Kaya A and Weber M 1995 J. Vac. Sci. Technol. B 13 2400
11. Koops H W P, Schossler C, Kaya A and Weber M 1996 J. Vac. Sci. Technol. B 14 4105
12. Komuro M and Hiroshima H 1997 Microelectron. Eng. 35 273
13. Komuro M and Hiroshima H 1997 J. Vac. Sci. Technol. B 15 2809
14. Hrisoshima H, Okayama S, Ogura M, Komuro M, Nakazawa H, Nakagawa Y, Ohi K and Tanaka K 1995 J. Vac. Sci. Technol. B 13 2514
15. Simmons JG 1963 J. Appl. Phys. 34 1793