Step edge cut off - A new fabrication process for metal-based single electron devices

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 399-402

  Altmeyer, S ^b   Spangenberg, B ^b   Kuhnel F ^b   Kurz, H ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; ELECTRON BEAM LITHOGRAPHY; ELECTRON DEVICES; ELECTRON TUNNELING; ELECTRONS; GATES (TRANSISTOR);

COULOMB BLOCKADE; LIQUID HELIUM OPERATIONS; SINGLE ELECTRON TRANSISTOR; STEP EDGE CUT OFF; THERMAL ENERGY; TUNNELING CAPACITANCES;

MICROELECTRONIC PROCESSING;

EID: 0029732129     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00272-3     Document Type: Article

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