Application of hot wire deposited intrinsic poly-silicon films in n-i-p cells and TFTS

Materials Research Society Symposium - Proceedings

Volumn 467, Issue , 1997, Pages 445-450

  Rath, J K ^a   van Zutphen, A J M M ^a   Meiling, H ^a   Schropp, R E I ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ELECTRON TRANSPORT PROPERTIES; FILM PREPARATION; GRAIN SIZE AND SHAPE; HALL EFFECT; SEMICONDUCTING FILMS; THIN FILM TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

AMBIPOLAR DIFFUSION; DUAL BEAM PHOTOCONDUCTIVITY; HOT WIRE DEPOSITION; OPTICAL ABSORPTION SPECTRUM; SATURATION MOBILITY;

SEMICONDUCTING SILICON;

EID: 0031359672     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-467-445     Document Type: Conference Paper

References (11)